Insights into the growth mechanism of InxGa1-xN epitaxial nanostructures formed using a silane predose (2008)

First Author: Oliver R
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.05.001

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.05.001

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 15