Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy (2009)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3184593
Publication URI: http://dx.doi.org/10.1063/1.3184593
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 2