Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells (2013)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jg09
Publication URI: http://dx.doi.org/10.7567/jjap.52.08jg09
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 8S