Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps (2013)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/28/9/094006
Publication URI: http://dx.doi.org/10.1088/0268-1242/28/9/094006
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 9