Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps (2013)

First Author: Wallis D

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/28/9/094006

Publication URI: http://dx.doi.org/10.1088/0268-1242/28/9/094006

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 9