High-efficiency InGaN/GaN quantum well structures on large area silicon substrates (2011)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201100129
Publication URI: http://dx.doi.org/10.1002/pssa.201100129
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 1