InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength (2010)
Attributed to:
LED Lighting for the 21st Century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200983522
Publication URI: http://dx.doi.org/10.1002/pssc.200983522
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 7-8