GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE (2009)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.814919
Publication URI: http://dx.doi.org/10.1117/12.814919
Type: Conference/Paper/Proceeding/Abstract