Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN x and AlGaN layers (2010)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/209/1/012017
Publication URI: http://dx.doi.org/10.1088/1742-6596/209/1/012017
Type: Journal Article/Review
Parent Publication: Journal of Physics: Conference Series