Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer (2010)

First Author: Häberlen M
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.200983537

Publication URI: http://dx.doi.org/10.1002/pssb.200983537

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 7