Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer (2010)
Attributed to:
LED Lighting for the 21st Century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.200983537
Publication URI: http://dx.doi.org/10.1002/pssb.200983537
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 7