The influence of coalescence time on unintentional doping in GaN/sapphire (2009)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.11.015
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.11.015
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 2