The impact of ScO x N y interlayers on unintentional doping and threading dislocations in GaN (2010)

First Author: Zhu T

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/209/1/012067

Publication URI: http://dx.doi.org/10.1088/1742-6596/209/1/012067

Type: Journal Article/Review

Parent Publication: Journal of Physics: Conference Series