Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers (2009)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.03.029
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.03.029
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 12