Defect reduction in non-polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire (2009)

First Author: Johnston C

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.200880788

Publication URI: http://dx.doi.org/10.1002/pssa.200880788

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 6