Defect reduction in non-polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire (2009)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.200880788
Publication URI: http://dx.doi.org/10.1002/pssa.200880788
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 6