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Dependence of magnetoresistance on dopant density in phosphorous doped silicon (2011)

First Author: Porter N

Attributed to: Spintronics at Leeds: Platform Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3536663

Publication URI: http://dx.doi.org/10.1063/1.3536663

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 7