High quantum efficiency InGaN/GaN structures emitting at 540 nm (2006)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200565252
Publication URI: http://dx.doi.org/10.1002/pssc.200565252
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 6