Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs (2006)
Attributed to:
Optimising GaN light emitting structures on free-standing GaN substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200565210
Publication URI: http://dx.doi.org/10.1002/pssc.200565210
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 6