Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment (2010)

First Author: Ashraf H
Attributed to:  Science Bridge Award USA: Harnessing Materials for Energy funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.043

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.043

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 4