Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates (2013)

First Author: Taylor E

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/28/6/065011

Publication URI: http://dx.doi.org/10.1088/0268-1242/28/6/065011

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 6