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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop (2013)

First Author: Davies M

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4781398

Publication URI: http://dx.doi.org/10.1063/1.4781398

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 2