The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures (2012)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3703062
Publication URI: http://dx.doi.org/10.1063/1.3703062
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 8