Response to "Comment on 'The effects of Si doping on dislocation movement and tensile stress in GaN films'" [J. Appl. Phys. 109, 073509 (2011)] (2011)
Attributed to:
LED Lighting for the 21st Century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3656431
Publication URI: http://dx.doi.org/10.1063/1.3656431
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 9