Response to "Comment on 'The effects of Si doping on dislocation movement and tensile stress in GaN films'" [J. Appl. Phys. 109, 073509 (2011)] (2011)

First Author: Moram M

Attributed to: LED Lighting for the 21st Century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3656431

Publication URI: http://dx.doi.org/10.1063/1.3656431

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 9