The effects of Si doping on dislocation movement and tensile stress in GaN films (2011)

First Author: Moram M
Attributed to:  Science Bridge Award USA: Harnessing Materials for Energy funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3553841

Publication URI: http://dx.doi.org/10.1063/1.3553841

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 7