Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers (2010)

First Author: Moram M

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200983494

Publication URI: http://dx.doi.org/10.1002/pssc.200983494

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 7-8