Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers (2010)
Attributed to:
Lighting the Future
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200983494
Publication URI: http://dx.doi.org/10.1002/pssc.200983494
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 7-8