Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy (2009)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3160312
Publication URI: http://dx.doi.org/10.1063/1.3160312
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 1