Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers (2009)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3119321
Publication URI: http://dx.doi.org/10.1063/1.3119321
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 16