1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. (2014)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.22.022608
PubMed Identifier: 25321730
Publication URI: http://europepmc.org/abstract/MED/25321730
Type: Journal Article/Review
Volume: 22
Parent Publication: Optics express
Issue: 19
ISSN: 1094-4087