An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown (2013)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jphot.2013.2272776
Publication URI: http://dx.doi.org/10.1109/jphot.2013.2272776
Type: Journal Article/Review
Parent Publication: IEEE Photonics Journal
Issue: 4