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InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product (2012)

First Author: Ker P

Attributed to: Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/oecc.2012.6276450

Publication URI: http://dx.doi.org/10.1109/oecc.2012.6276450

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-0976-9