The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures (2014)

First Author: Davies M

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4894834

Publication URI: http://dx.doi.org/10.1063/1.4894834

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 9