High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop (2013)

First Author: Davies M
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4781398

Publication URI: http://dx.doi.org/10.1063/1.4781398

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 2