Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures (2014)

First Author: Davies M
Attributed to:  Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201300451

Publication URI: http://dx.doi.org/10.1002/pssc.201300451

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 3-4