Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors (2014)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1017/s1431927614006849
Publication URI: http://dx.doi.org/10.1017/s1431927614006849
Type: Journal Article/Review
Parent Publication: Microscopy and Microanalysis
Issue: S3