Broadband near-infrared emission from bismuth doped silicon oxide films prepared by ion-implantation (2012)
Attributed to:
Silicon emission technologies based on nanocrystals
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/commad.2012.6472341
Publication URI: http://dx.doi.org/10.1109/commad.2012.6472341
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4673-3047-3