📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Broadband near-infrared emission from bismuth doped silicon oxide films prepared by ion-implantation (2012)

First Author: Halsall M

Attributed to: Silicon emission technologies based on nanocrystals funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/commad.2012.6472341

Publication URI: http://dx.doi.org/10.1109/commad.2012.6472341

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-3047-3