Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension (2014)

First Author: Rong H

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/epe.2014.6910747

Publication URI: http://dx.doi.org/10.1109/epe.2014.6910747

Type: Conference/Paper/Proceeding/Abstract