The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates (2012)

First Author: Wang T
Attributed to:  Silicon based QD light sources and lasers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3682314

Publication URI: http://dx.doi.org/10.1063/1.3682314

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 5