Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications (2012)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4768532
Publication URI: http://dx.doi.org/10.1063/1.4768532
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 22