Recombination mechanisms and band alignment of GaAs 1-x Bi x /GaAs light emitting diodes (2012)

First Author: Hossain N
Attributed to:  Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3681139

Publication URI: http://dx.doi.org/10.1063/1.3681139

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 5