Modelling the Auger Recombination rates of GaAs(1-x)Bix alloys (2013)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/nusod.2013.6633134
Publication URI: http://dx.doi.org/10.1109/nusod.2013.6633134
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4673-6309-9