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InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content (2012)

First Author: Hosea T

Attributed to: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/icp.2012.6379872

Publication URI: http://dx.doi.org/10.1109/icp.2012.6379872

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-1461-9