InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content (2012)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/icp.2012.6379872
Publication URI: http://dx.doi.org/10.1109/icp.2012.6379872
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4673-1461-9