The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures (2014)
Attributed to:
Nitrides for the 21st century
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4894834
Publication URI: http://dx.doi.org/10.1063/1.4894834
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 9