Annular fast electron transport in silicon arising from low-temperature resistivity. (2013)

First Author: MacLellan DA

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevlett.111.095001

PubMed Identifier: 24033041

Publication URI: http://europepmc.org/abstract/MED/24033041

Type: Journal Article/Review

Volume: 111

Parent Publication: Physical review letters

Issue: 9

ISSN: 0031-9007