Investigation of Abnormal $V_{\rm TH}/V_{\rm FB}$ Shifts Under Operating Conditions in Flash Memory Cells With $ \hbox{Al}_{2}\hbox{O}_{3}$ High-$\kappa$ Gate Stacks (2012)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2012.2194294
Publication URI: http://dx.doi.org/10.1109/ted.2012.2194294
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 7