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Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High-$\kappa$ Interpoly Gate Dielectric Stacks (2013)

First Author: Tang B

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2013.2264163

Publication URI: http://dx.doi.org/10.1109/ted.2013.2264163

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 7