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Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory (2013)

First Author: Miranda E

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4836935

Publication URI: http://dx.doi.org/10.1063/1.4836935

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 22